The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Feb. 11, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chun-Ya Chiu, Tainan, TW;
Chin-Hung Chen, Tainan, TW;
Chi-Ting Wu, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of manufacturing semiconductor devices, including the steps of providing a substrate with a first active region, a second active region and a third active region, forming dummy gates in the first active region, the second active region and the third active region, removing the dummy gates to form trenches in the first active region, the second active region and the third active region, forming a high-k dielectric layer, a first bottom barrier metal layer on the high-k dielectric layer, a second bottom barrier metal layer on the first bottom barrier metal layer, and a first work function metal layer on the second bottom barrier metal layer in the trenches, removing the first work function metal layer from the second active region and the third active region, removing the second bottom barrier metal layer from the third region, and filling up each trench with a low resistance metal.