The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Jul. 31, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chun-Hsiung Tsai, Xinpu Township, TW;
Kuo-Feng Yu, Zhudong Township, TW;
Chien-Tai Chan, Hsinchu, TW;
Ziwei Fang, Baoshan Township, TW;
Kei-Wei Chen, Tainan, TW;
Huai-Tei Yang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/2254 (2013.01); H01L 29/6659 (2013.01); H01L 29/66492 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/785 (2013.01);
Abstract
A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack. The gate stack contains a doped work function metal (WFM) stack and a metal gate electrode overlying the doped WFM stack.