The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Apr. 24, 2018
International Business Machines Corporation, Armonk, NY (US);
Soon-Cheon Seo, Glenmont, NY (US);
Seyoung Kim, White Plains, NY (US);
Injo Ok, Loudonville, NY (US);
Choonghyun Lee, Rensselaer, NY (US);
Kisup Chung, Slingerlands, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a bottom electrode for MRAM comprises: depositing a conductive material into a trench in a substrate and planarizing; depositing a selective cap on the conductive material; depositing a layer of high stress material on upper surfaces of the substrate and the cap; patterning the high stress material to remove the layer of high stress material on the upper surfaces of the substrate and leaving the layer of high stress material on the upper surfaces of the cap; depositing a layer of dielectric material on the upper surfaces of the substrate and on upper surfaces of the high stress material on the cap; planarizing the layer of dielectric material; and forming a magnetic tunnel junction stack on the dielectric material over the conductive material.