The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Feb. 26, 2019
Applicant:

Fujimi Incorporated, Kiyosu-shi, Aichi, JP;

Inventor:

Kohsuke Tsuchiya, Aichi, JP;

Assignee:

FUJIMI INCORPORATED, Kiyosu-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/02 (2006.01); C09G 1/02 (2006.01); B24B 37/04 (2012.01); B08B 3/12 (2006.01); B08B 3/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B08B 3/08 (2013.01); B08B 3/12 (2013.01); B24B 37/044 (2013.01); C09G 1/02 (2013.01); H01L 21/02024 (2013.01); H01L 21/02052 (2013.01); H01L 21/02057 (2013.01);
Abstract

There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×10particles/mL or more and 1.0×10particles/mL or less by calculating from (1 [mL]×specific gravity of the composition [g/mL]×concentration of the abrasives [wt %])/((4/3)π×(average secondary particle diameter×10[cm]/2)[/particle]×specific gravity of the abrasives [g/cm]), using concentration of the abrasives in the surface treatment composition and an average secondary particle diameter measured by dynamic light scattering method, provided that all of the abrasives in the surface treatment composition used in the surface treatment step are assumed to have the average secondary particle diameter.


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