logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10748758 B1

PDFFull Text
Date of Patent:
Aug. 18, 2020

Filed:

Aug. 07, 2018

Method for depositing a silicon nitride film and film deposition apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hitoshi Kato, Iwate, JP;

Yutaka Takahashi, Iwate, JP;

Kazumi Kubo, Iwate, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Nicholas J Tobergte

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); H01L 21/687 (2006.01); C23C 16/34 (2006.01); C23C 16/507 (2006.01); C23C 16/452 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/452 (2013.01); C23C 16/4584 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/45559 (2013.01); C23C 16/50 (2013.01); C23C 16/507 (2013.01); H01J 37/32 (2013.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 21/76831 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.

Find Patent Forward Citations

Kato, Hitoshi. (2020). Method for depositing a silicon nitride film and film deposition apparatus (U.S. Patent No. 10748758). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10748758

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…