The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Aug. 07, 2018
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); H01L 21/687 (2006.01); C23C 16/34 (2006.01); C23C 16/507 (2006.01); C23C 16/452 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/452 (2013.01); C23C 16/4584 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/45559 (2013.01); C23C 16/50 (2013.01); C23C 16/507 (2013.01); H01J 37/32 (2013.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 21/76831 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/3321 (2013.01);
Abstract
A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.