The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Aug. 23, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Siao-Shan Wang, Tainan, TW;

Chen-Yu Liu, Kaohsiung, TW;

Ching-Yu Chang, Yilang County, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/09 (2006.01); H01L 21/027 (2006.01); G03F 7/095 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); G03F 7/42 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2002 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2022 (2013.01); G03F 7/322 (2013.01); G03F 7/327 (2013.01); G03F 7/38 (2013.01); G03F 7/422 (2013.01); H01L 21/0274 (2013.01);
Abstract

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.


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