The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Dec. 20, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yun-Yue Lin, Hsinchu, TW;
Hsuan-Chen Chen, Tainan, TW;
Chih-Cheng Lin, Kaohsiung, TW;
Hsin-Chang Lee, Hsinchu County, TW;
Yao-Ching Ku, Hsinchu, TW;
Wei-Jen Lo, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Mark Chien, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.