The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Aug. 20, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tzu-Heng Chang, New Taipei, TW;

Kuo-Ji Chen, New Taipei, TW;

Ming-Hsiang Song, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0274 (2013.01); H01L 27/0207 (2013.01); H01L 27/0266 (2013.01); H01L 27/0292 (2013.01); H01L 27/0296 (2013.01); H01L 27/0886 (2013.01);
Abstract

A device includes an integrated circuit including a single standard cell that is selected from a standard cell library used for design of the layout of the integrated circuit. The single standard cell includes a first active region, a second active region, a first gate, a second gate, and a third gate. The first gate is arranged over the first active region, for formation of at least one first electrostatic discharge (ESD) protection component. The second gate is separate from the first gate, and the second gate is arranged over the second active region, for formation of at least one second ESD protection component. The third gate is separate from the first gate and the second gate, and the third gate is arranged over the first active region and the second active region, for formation of at least one transistor.


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