Method of fabricating semiconductor package

Abstract

A semiconductor package includes: a redistribution substrate; a semiconductor chip on the redistribution substrate; and an external terminal on a bottom surface of the redistribution substrate, wherein the redistribution substrate comprises: a first insulating layer including a first opening; a second insulating layer on the first insulating layer and including a second opening, wherein the second opening is positioned in the first opening in a plan view; a first barrier metal layer disposed along a sidewall of the first opening and along a sidewall of the second opening; a first redistribution conductive pattern on the first barrier metal layer; a third insulating layer on a bottom surface of the first insulating layer; and a pad penetrating the third insulating layer and electrically connecting to the first redistribution conductive pattern, wherein the external terminal is provided on the pad, wherein the second insulating layer at least partially covers a chip pad of the semiconductor chip, and the second opening at least partially exposes the chip pad, wherein, inside the second insulating layer, the first barrier metal layer is in contact with the chip pad through the second opening, and wherein the first redistribution conductive pattern has a surface roughness including protrusions extending in a range of from about 0.01 μm to about 0.5 μm, and the first insulating layer has a surface roughness smaller than the surface roughness of the first redistribution conductive pattern.