The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Feb. 05, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Fu-Jung Chuang, Kaohsiung, TW;
Ching-Ling Lin, Kaohsiung, TW;
Po-Jen Chuang, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Wen-An Liang, Tainan, TW;
Chia-Ming Kuo, Kaohsiung, TW;
Guan-Wei Huang, Tainan, TW;
Yuan-Yu Chung, Tainan, TW;
I-Ming Tseng, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate.