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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10741450 B1

PDFFull Text
Date of Patent:
Aug. 11, 2020

Filed:

Feb. 09, 2018

Semiconductor device having a metal gate and formation method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chang-Yun Chang, Taipei, TW;

Bone-Fong Wu, Hsinchu, TW;

Ming-Chang Wen, Kaohsiung, TW;

Ya-Hsiu Lin, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Nilufa Rahim

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/027 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0217 (2013.01); H01L 21/02156 (2013.01); H01L 21/31111 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 21/0274 (2013.01); H01L 21/26513 (2013.01); H01L 21/31053 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 29/6656 (2013.01);
Abstract

A method of forming a semiconductor device includes forming a gate structure over first and second fins over a substrate; forming an interlayer dielectric layer surrounding first and second fins; etching a first trench in the interlayer dielectric layer between the first and second fins uncovered by the gate structure; forming a helmet layer in the first trench; and filling the first trench with a dielectric feature.

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Chang, Chang-Yun. (2020). Semiconductor device having a metal gate and formation method thereof (U.S. Patent No. 10741450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10741450

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