The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Aug. 13, 2018
International Business Machines Corporation, Armonk, NY (US);
Fee Li Lie, Albany, NY (US);
Mona Ebrish, Albany, NY (US);
Ekmini A. De Silva, Slingerlands, NY (US);
Indira Seshadri, Niskayuna, NY (US);
Gauri Karve, Cohoes, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Leigh Anne H. Clevenger, Rhinebeck, NY (US);
Nicolas Loubet, Guilderland, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a nanosheet device is provided. The method includes forming a nanosheet channel layer stack and dummy gate structure on a substrate. The method further includes forming a curved recess in the substrate surface adjacent to the nanosheet channel layer stack. The method further includes depositing a protective layer on the curved recess, dummy gate structure, and exposed sidewall surfaces of the nanosheet layer stack, and removing a portion of the protective layer on the curved recess to form a downward-spiked ridge around the rim of the curved recess. The method further includes extending the curved recess deeper into the substrate to form an extended recess, and forming a sacrificial layer at the surface of the extended recess in the substrate.