The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Jun. 29, 2018
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Jean-Pierre Colinge, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA (US);
Yeh Hsu, Guishan Township, TW;
Tsung-Hsing Yu, Taipei, TW;
Chia-Wen Liu, Taipei, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-chu, TW;
Abstract
A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.