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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10734227 B1

PDFFull Text
Date of Patent:
Aug. 04, 2020

Filed:

Jun. 03, 2019

Semiconductor device and method

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Dong-Sheng Li, Hsinchu, TW;

Chia-Hui Lin, Dajia Township, TW;

Kai Hung Cheng, Tainan, TW;

Yao-Hsu Sun, Hsinchu, TW;

Wen-Cheng Wu, Kaohsiung, TW;

Bo-Cyuan Lu, New Taipei, TW;

Sung-En Lin, Hsinchu, TW;

Tai-Chun Huang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Bradley Smith

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/8238 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02282 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/162 (2013.01); G03F 7/20 (2013.01); G03F 7/26 (2013.01);
Abstract

A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.

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