The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Oct. 30, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dummy fin structure over a semiconductor substrate, and forming a mask layer covering the dummy fin structure. The method further includes irradiating the mask layer, so that the mask layer is divided into an unirradiated portion and an irradiated portion, and the irradiated portion is over the dummy fin structure. The method also includes removing a top portion of the irradiated portion and a top portion of the dummy fin structure by a first etching operation, such that the dummy fin structure has a convex top surface after the first etching operation. The method includes removing a middle portion of the dummy fin structure by a second etching operation, such that the dummy fin structure has a concave top surface after the second etching operation.