The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Apr. 25, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Harry-Hak-Lay Chuang, Paya Lebar Crescent, SG;
Sheng-Huang Huang, Hsinchu, TW;
Keng-Ming Kuo, Yunlin County, TW;
Hung Cho Wang, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract
The present disclosure provides a semiconductor structure, including a logic region and a memory region. The memory region includes a first Nmetal line of an Nmetal layer, a magnetic tunneling junction (MTJ) over first Nmetal line, a carbon-based layer between the first Nmetal line and the MTJ, and a first (N+M)metal via of an (N+M)metal layer. A method of manufacturing the semiconductor structure is also disclosed.