The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Aug. 17, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Hao Wang, Hsinchu County, TW;
Wai-Yi Lien, Hsinchu, TW;
Gwan-Sin Chang, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Ching Hsueh, Taipei, TW;
Jia-Chuan You, Taoyuan, TW;
Chia-Hao Chang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/7847 (2013.01); H01L 29/7855 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor fin, a first gate stack, and a first metal element-containing dielectric mask. The semiconductor fin protrudes from the substrate. The first gate stack is over the semiconductor fin. The first metal element-containing dielectric mask is over the first gate stack.