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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10720346 B1

PDFFull Text
Date of Patent:
Jul. 21, 2020

Filed:

Jun. 15, 2016

Substrate support with thermal zones for semiconductor processing

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Harmeet Singh, Fremont, CA (US);

Keith Gaff, Fremont, CA (US);

Neil Benjamin, East Palo Alto, CA (US);

Keith Comendant, Fremont, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:

Dana Ross

Assistant Examiner:

Joseph W Iskra

Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 14/54 (2006.01); C23C 16/458 (2006.01); H01L 21/683 (2006.01); H01L 21/3065 (2006.01); H05B 1/02 (2006.01); H05B 3/26 (2006.01); H05B 3/00 (2006.01); C23C 14/50 (2006.01); C23C 16/46 (2006.01); C23C 16/509 (2006.01); H01J 37/32 (2006.01); C23C 4/134 (2016.01); C23C 4/10 (2016.01); C23C 14/10 (2006.01); C23C 14/34 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67103 (2013.01); C23C 4/10 (2013.01); C23C 4/134 (2016.01); C23C 14/10 (2013.01); C23C 14/34 (2013.01); C23C 14/50 (2013.01); C23C 14/541 (2013.01); C23C 16/401 (2013.01); C23C 16/4586 (2013.01); C23C 16/46 (2013.01); C23C 16/509 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01L 21/3065 (2013.01); H01L 21/67248 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01); H05B 1/0233 (2013.01); H05B 3/00 (2013.01); H05B 3/26 (2013.01); H01J 37/32091 (2013.01); H01J 2237/327 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3323 (2013.01); H01J 2237/3342 (2013.01); H01J 2237/3343 (2013.01); H01L 21/0262 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01L 21/67109 (2013.01); Y10T 29/49083 (2015.01); Y10T 29/49099 (2015.01);
Abstract

A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.

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