The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Dec. 27, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yong-Sung Park, Suwon-si, KR;
Woo-Jin Kim, Yongin-si, KR;
Jeong-Heon Park, Hwaseong-si, KR;
Se-Chung Oh, Yongin-si, KR;
Joon-Myoung Lee, Anyang-si, KR;
Hyun Cho, Changwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.