The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Dec. 21, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ku-Feng Lin, New Taipei, TW;
Hung-Chang Yu, Hsinchu, TW;
Kai-Chun Lin, Hsinchu, TW;
Yu-Der Chih, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/18 (2006.01); H01L 27/088 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 25/18 (2013.01); H01L 27/088 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1641 (2013.01); H01L 45/1683 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 45/04 (2013.01); H01L 45/16 (2013.01);
Abstract
A method includes forming an insulator over a substrate. The insulator includes a first electrode, a second electrode, and a resistive element between the first electrode and the second electrode. The insulator is transformed into a resistor by applying a voltage to the insulator. The resistor is electrically connected to a transistor after transforming the insulator into the resistor.