The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Mar. 14, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Bryan L. Buckalew, Tualatin, OR (US);

Thomas A. Ponnuswamy, Sherwood, OR (US);

Steven T. Mayer, Lake Oswego, OR (US);

Stephen J. Banik, II, Portland, OR (US);

Justin Oberst, Beaverton, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C25D 7/12 (2006.01); H01L 23/66 (2006.01); C25F 3/22 (2006.01); C25D 17/00 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); C25D 7/123 (2013.01); C25D 17/001 (2013.01); C25F 3/22 (2013.01); H01L 23/66 (2013.01); H01L 24/05 (2013.01); H01L 25/105 (2013.01); C25D 17/002 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02333 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/01026 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01402 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15313 (2013.01);
Abstract

Systems and methods for achieving uniformity across a redistribution layer are described. One of the methods includes patterning a photoresist layer over a substrate. The patterning defines a region for a conductive line and a via disposed below the region for the conductive line. The method further includes depositing a conductive material in between the patterned photoresist layer, such that the conductive material fills the via and the region for the conductive line. The depositing causes an overgrowth of conductive material of the conductive line to form a bump of the conductive material over the via. The method also includes planarizing a top surface of the conductive line while maintaining the patterned photoresist layer present over the substrate. The planarizing is facilitated by exerting a horizontal shear force over the conductive line and the bump. The planarizing is performed to flatten the bump.


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