The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jan. 15, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Cheng-Tsung Wu, Taipei, TW;
Shin-Cheng Lin, Tainan, TW;
Hsiao-Ling Chiang, Hsinchu, TW;
Wen-Hsin Lin, Jhubei, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor structure including a substrate, a first well, a field oxide layer, a first conductive line and a second conductive line is provided. The substrate has a first conductivity type. The first well is formed on the substrate and has a second conductivity type. The field oxide layer is disposed on the first well. The first conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The second conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The first conductive line is spaced apart from the second conductive line.