The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Feb. 15, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chu-An Lee, Hsinchu, TW;
Chen-Hao Wu, Hsinchu, TW;
Peng-Chung Jangjian, Hsinchu, TW;
Chun-Wen Hsiao, Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate, an isolation feature between and adjacent to the first fin and the second fin, and a fin isolation structure between the first fin and the second fin. The fin isolation structure includes a first insulating layer partially embedded in the isolation feature, a second insulating layer having sidewall surfaces and a bottom surface that are covered by the first insulating layer, a first capping layer covering the second insulating layer and having sidewall surfaces that are covered by the first insulating layer, and a second capping layer having sidewall surfaces and a bottom surface that are covered by the first capping layer.