The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Dec. 17, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Jin Hee Park, Santa Clara, CA (US);
Tae Hong Ha, San Jose, CA (US);
Sang-Hyeob Lee, Fremont, CA (US);
Thomas Jongwan Kwon, Dublin, CA (US);
Jaesoo Ahn, Fremont, CA (US);
Xianmin Tang, San Jose, CA (US);
Er-Xuan Ping, Fremont, CA (US);
Sree Kesapragada, Union City, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.