The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Apr. 25, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chao-Hung Wang, Taipei, TW;
Yen-Yi Wu, Taipei, TW;
Shih-Chun Chen, Taipei, TW;
Yao-Wen Chang, Taipei, TW;
Meng-Kai Hsu, Xinfeng Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A method related to legalize mixed-cell height standard cells of an IC is provided. A global placement of the IC is obtained. A plurality of standard cells of the IC are placed in the global placement. Each standard cell is moved from a position to the nearest row in the global placement. A displacement value of each moved standard cell is obtained in the global placement. The global placement of the IC is divided into a plurality of windows according to the displacement values of the moved standard cells in each window and a dead space corresponding to each moved standard cell in each window. All overlapping areas among the standard cells of each window are removed to obtain a detailed placement. The IC is manufactured according to the detailed placement. The standard cells have different cell heights in each window.