The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Dec. 06, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Jui Chen, Taipei, TW;
I-Shi Wang, Sanxia Township, TW;
Ren-Dou Lee, Hsinchu, TW;
Jen-Hao Liu, Zhunan Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 3/00 (2006.01); B81B 7/02 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81B 7/0077 (2013.01); B81B 7/02 (2013.01); B81C 1/00238 (2013.01); B81C 1/00269 (2013.01); B81C 3/005 (2013.01); B81C 3/008 (2013.01); B81C 2203/019 (2013.01); B81C 2203/054 (2013.01); B81C 2203/075 (2013.01); B81C 2203/0735 (2013.01);
Abstract
A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.