The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Jul. 04, 2018
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Wanbing Yi, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Kiok Boone Elgin Quek, Singapore, SG;

Khee Yong Lim, Singapore, SG;

Chim Seng Seet, Singapore, SG;

Rajesh Nair, Santa Clara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0216 (2013.01); H01L 24/03 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/0391 (2013.01);
Abstract

A semiconductor device having a substrate with at least one photo-detecting region and at least one bond pad is provided. A first passivation layer is deposited over the substrate and over step portions at the edges of the bond pad and a trench having sidewalls and a bottom surface is formed in the substrate. A light shielding layer is deposited over the first passivation layer and covering the trench sidewalls. The light shielding layer has end portions at the photo-detecting region, at step portions at the edges of the bond pad and at the bottom surface of the trench. A second passivation layer is deposited over the light shielding layer. A third passivation layer is deposited over the end portions of the light shielding layer at the photo-detecting region and at the step portions at edges of the bond pad.


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