The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Oct. 05, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Sheng Lien, Hsinchu, TW;
Shih-Ta Yu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An etching method for an IC is provided. The etching method includes retrieving processing data including a pattern-density and at least one etching parameter of an etching process for a semiconductor device; determining end point time by consulting a table which records historical information of a plurality of PDs, the etching parameter and the EP time; compensating for the PD and the EP time by adjusting the etching parameter to perform the etching process; and performing the etching process on another semiconductor device based on the adjusted etching parameter, the PD and the EP time to manufacture the IC.