The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Nov. 07, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Kuan-Hao Tseng, Kaohsiung, TW;
Chien-Ting Lin, Hsinchu, TW;
Shih-Hung Tsai, Tainan, TW;
Po-Kuang Hsieh, Kaohsiung, TW;
Yu-Ting Tseng, Tainan, TW;
Chueh-Fei Tai, Tainan, TW;
Cheng-Ping Kuo, Pingtung County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8238 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01); H01L 29/167 (2006.01); H01L 21/762 (2006.01); H01L 21/266 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/30625 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0924 (2013.01); H01L 27/0928 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/76224 (2013.01); H01L 29/167 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.