The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

May. 11, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jingmei Liang, San Jose, CA (US);

Yong Sun, San Jose, CA (US);

Jinrui Guo, Santa Clara, CA (US);

Praket P. Jha, San Jose, CA (US);

Jung Chan Lee, San Jose, CA (US);

Tza-Jing Gung, San Jose, CA (US);

Mukund Srinivasan, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/32 (2006.01); C23C 16/36 (2006.01); C23C 16/40 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/505 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); C23C 16/045 (2013.01); C23C 16/308 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/402 (2013.01); C23C 16/4554 (2013.01); C23C 16/45523 (2013.01); C23C 16/505 (2013.01); H01J 37/32899 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02326 (2013.01); H01L 21/02329 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/67167 (2013.01); H01L 21/67184 (2013.01); H01L 21/67207 (2013.01); H01L 21/76229 (2013.01); H01J 37/32357 (2013.01); H01J 2237/3321 (2013.01);
Abstract

Implementations disclosed herein relate to methods for forming and filling trenches in a substrate with a flowable dielectric material. In one implementation, the method includes subjecting a substrate having at least one trench to a deposition process to form a flowable layer over a bottom surface and sidewall surfaces of the trench in a bottom-up fashion until the flowable layer reaches a predetermined deposition thickness, subjecting the flowable layer to a first curing process, the first curing process being a UV curing process, subjecting the UV cured flowable layer to a second curing process, the second curing process being a plasma or plasma-assisted process, and performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.


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