The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Nov. 30, 2017
Applicant:

Samsung Electronics Co., Ltd, Suwon-si, Gyeonggi-do, KR;

Inventors:

Won-Ho Jang, Hwaseong-si, KR;

Hyun-Jung Lee, Goyang-si, KR;

Se-Jin Park, Suwon-si, KR;

Yong-Sun Ko, Suwon-si, KR;

Dong-Gyun Han, Yongin-si, KR;

Woo-Gwan Shim, Yongin-si, KR;

Jeong-Yong Bae, Cheonan-si, KR;

Woo-Young Kim, Cheonan-si, KR;

Boong Kim, Cheonan-si, KR;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Semes Co., Ltd., Chungcheongnam-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F26B 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); B08B 7/00 (2006.01); H01L 21/687 (2006.01); B08B 3/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02101 (2013.01); B08B 7/0021 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67034 (2013.01); H01L 21/67103 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/6875 (2013.01); H01L 21/68742 (2013.01); B08B 3/08 (2013.01); B08B 2203/007 (2013.01);
Abstract

A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.


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