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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10707060 B1

PDFFull Text
Date of Patent:
Jul. 07, 2020

Filed:

Sep. 14, 2018

Method and apparatus for plasma dicing a semi-conductor wafer

Applicant:

Plasma-therm Llc, St. Petersburg, FL (US);

Inventors:

Chris Johnson, St. Petersburg, FL (US);

David Johnson, Cleveland, GA (US);

Linnell Martinez, Lakeland, FL (US);

David Pays-Volard, St. Petersburg, FL (US);

Rich Gauldin, St. Petersburg, FL (US);

Russell Westerman, Land O'Lakes, FL (US);

Gordon M. Grivna, Mesa, AZ (US);

Assignee:

Plasma-Therm LLC, St. Petersburg, FL (US);

Attorneys:

Burr & Forman LLP

Harvey S. Kauget

Primary Examiner:

Erik T K. Peterson

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01L 21/78 (2006.01); H01L 21/68 (2006.01); H01L 21/311 (2006.01); H01L 21/677 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32623 (2013.01); H01J 37/321 (2013.01); H01J 37/32155 (2013.01); H01J 37/32642 (2013.01); H01J 37/32651 (2013.01); H01J 37/32724 (2013.01); H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01L 21/67069 (2013.01); H01L 21/68 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01); H01L 21/68735 (2013.01); H01L 21/68742 (2013.01); H01L 21/78 (2013.01); H01J 37/32422 (2013.01); H01L 21/31116 (2013.01); H01L 21/67739 (2013.01); H01L 2221/68327 (2013.01); Y10S 414/139 (2013.01);
Abstract

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

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