The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Nov. 16, 2018
Applicant:

Advanced Energy Industries, Inc., Fort Collins, CO (US);

Inventors:

Denis Shaw, Fort Collins, CO (US);

Kevin Fairbairn, Los Gatos, CA (US);

Daniel Carter, Fort Collins, CO (US);

Assignee:

Advanced Energy Industries, Inc., Fort Collins, CO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/32412 (2013.01); H01J 37/32477 (2013.01); H01J 37/32559 (2013.01); H01J 37/32568 (2013.01); H01J 37/32706 (2013.01); H01J 37/32935 (2013.01); H01L 21/67109 (2013.01);
Abstract

Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.


Find Patent Forward Citations

Loading…