The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Dec. 26, 2018
Infineon Technologies Ag, Neubiberg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A wide band gap semiconductor device includes a first doping region of a first conductivity type and a second doping region of a second conductivity type. A drift portion of the second doping region has a first average net doping concentration lower than 1e17 cm. A highly doped portion of the second doping region has a second average net doping concentration higher than 5e18 cm. A compensation portion of the second doping region located between the drift and highly doped portions extends from a first area with a net doping concentration higher than 1e16 cmand lower than 1e17 cmto a second area with a net doping concentration higher than 5e18 cm. A maximum gradient of the net doping concentration within at least a part of the compensation portion extending from the second area towards the first area for at least 100 nm is lower than 5e22 cm.