The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Jan. 27, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Gang-Yi Lin, Taitung County, TW;
Shih-Fang Tzou, Tainan, TW;
Fu-Che Lee, Taichung, TW;
Feng-Yi Chang, Tainan, TW;
Ying-Chih Lin, Tainan, TW;
Kai-Lou Huang, New Taipei, TW;
Yi-Ching Chang, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a method for forming a semiconductor pattern, comprising: firstly, a target layer is provided and a first material layer is formed on the target layer, and then a first pattern is formed on the first material layer, followed by a first self-aligned double pattering step is performed, a plurality of first grooves are formed in the first material layer. Next, a second material layer is formed on the first material layer, and a plurality of second grooves are formed in the second material layer. Next, transferring a pattern of the overlapping portion of the first grooves and the second grooves into the target layer, the target layer includes a plurality of third patterns and a plurality of fourth patterns, an area of each fourth pattern is larger than an area of each third pattern.