Late gate cut using selective dielectric deposition

Abstract

Methods of forming a structure that includes field-effect transistor and structures that include a field effect-transistor. A dielectric cap is formed over a gate structure of a field-effect transistor, and an opening is patterned that extends fully through the dielectric cap to divide the dielectric cap into a first section and a second section spaced across the opening from the first surface. First and second dielectric spacers are respectively selectively deposited on respective first and second surfaces of the first and second sections of the dielectric cap to shorten the opening. A portion of the gate structure exposed through the opening between the first and second dielectric spacers is etched to form a cut that divides the gate electrode into first and second sections disconnected by the cut. A dielectric material is deposited in the opening and in the cut to form a dielectric pillar.