The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Jul. 18, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Bin Huang, Hsinchu, TW;
Chien-Mao Chen, Zhubei, TW;
Yu-Hsuan Kuo, Taipei, TW;
Shih-Kai Fan, Hsinchu, TW;
Chia-Hung Lai, Hsinchu, TW;
Kang-Min Kuo, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a shallow trench isolation (STI) structure. The semiconductor structure includes a substrate having a first surface. A STI structure extends from the first surface into the substrate. The STI structure includes a first portion and a second portion. The first portion extends from the first surface into the substrate, and has an intersection with the first surface. The second portion extends away from the first portion, and has a tip at a distance away from the intersection in a direction parallel to the first surface. The first portion and the second portion are filled with a dielectric material.