The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
Dec. 28, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Chanho Lee, Hwaseong-si, KR;
Hyunsoo Chung, Hwaseong-si, KR;
Hansung Ryu, Seoul, KR;
Inyoung Lee, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01); H01L 23/373 (2006.01); H01L 21/48 (2006.01); H01L 21/02 (2006.01); H01L 23/544 (2006.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/50 (2013.01); H01L 21/02118 (2013.01); H01L 21/486 (2013.01); H01L 21/76898 (2013.01); H01L 23/373 (2013.01); H01L 23/481 (2013.01); H01L 23/544 (2013.01); H01L 23/58 (2013.01); H01L 24/02 (2013.01); H01L 25/0657 (2013.01); H01L 23/3128 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/15311 (2013.01);
Abstract
A semiconductor device including a substrate, an insulating layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.