The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 10, 2019
Applicant:
Wonik Ips Co., Ltd., Pyeongtaek-si, Gyeonggi-do, KR;
Inventors:
Sang Jun Park, Yongin-si, KR;
Tae Ho Jeon, Pyeongtaek-si, KR;
Sang Jin Lee, Pyeongtaek-si, KR;
Chang Hee Han, Pyeongtaek-si, KR;
Tae Ho Kim, Osan-si, KR;
Assignee:
WONIK IPS CO., LTD., Pyeongtaek-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/02189 (2013.01); H01L 21/31122 (2013.01);
Abstract
Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.