The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Oct. 18, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuo-Chiang Tsai, Hsinchu, TW;
Fu-Hsiang Su, Zhubei, TW;
Ke-Jing Yu, Kaohsiung, TW;
Chih-Hong Hwang, New Taipei, TW;
Jyh-Huei Chen, Hsinchu, TW;
Taiwan Semiconductor Manufactruing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a gate stack over a substrate and an insulating capping layer over the gate stack. The semiconductor device structure also includes a source/drain contact structure adjacent to the gate stack and having an upper surface that is substantially level with the upper surface of the insulating capping layer. The semiconductor device structure also includes a first via structure passing through the insulating capping layer and electrically connected to the gate stack, and a second via structure above and electrically connected to the source/drain contact structure. The first via structure and the second via structure have different vertical heights.