The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Oct. 17, 2018
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

Adam Richard Brown, Stockport, GB;

Jim Brett Parkin, Stockport, GB;

Phil Rutter, Stockport, GB;

Steven Waterhouse, Stockport, GB;

Saurabh Pandey, Stockport, GB;

Assignee:

Nexperia B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01); H01L 29/423 (2006.01); H01L 27/07 (2006.01); H03K 17/30 (2006.01); H03K 17/16 (2006.01); H03K 17/081 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 27/0727 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/7813 (2013.01); H03K 17/08104 (2013.01); H03K 17/164 (2013.01); H03K 17/302 (2013.01); H03K 17/687 (2013.01); H03K 17/6874 (2013.01); H03K 2017/0806 (2013.01);
Abstract

A field effect transistor semiconductor device having a compact device footprint for use in automotive and hot swap applications. The device includes a plurality of field effect transistor cells with the plurality of transistor cells having at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell arranged on a substrate. The field effect transistor semiconductor device is configured and arranged to operate the at least one high threshold voltage transistor cell during linear mode operation, and operate both the low threshold voltage transistor cell and the high threshold voltage transistor cell during resistive mode operation. Further provided is a method of operating field effect transistor semiconductor device including a plurality of field effect transistor cells that includes at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell.


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