logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10692696 B1

PDFFull Text
Date of Patent:
Jun. 23, 2020

Filed:

May. 27, 2014

Deflection scan speed adjustment during charged particle exposure

Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Teunis Van De Peut, Leusden, NL;

Marco Jan-Jaco Wieland, Delft, NL;

Assignee:

ASML NETHERLANDS B.V., Veldhoven, NL;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, LLP

Primary Examiner:

James Choi

Int. Cl.
CPC ...
H01J 37/302 (2006.01); H01J 37/317 (2006.01); H01J 37/04 (2006.01); H01J 37/30 (2006.01); G06T 1/20 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G03F 7/20 (2006.01); G06T 1/60 (2006.01); H04N 1/405 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3026 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/70475 (2013.01); G06T 1/20 (2013.01); H01J 37/045 (2013.01); H01J 37/3002 (2013.01); H01J 37/3174 (2013.01); H01J 37/3175 (2013.01); H01J 37/3177 (2013.01); G06T 1/60 (2013.01); H01J 2237/3175 (2013.01); H01J 2237/31761 (2013.01); H01J 2237/31764 (2013.01); H04N 1/405 (2013.01);
Abstract

A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.

Find Patent Forward Citations

Van De Peut, Teunis. (2020). Deflection scan speed adjustment during charged particle exposure (U.S. Patent No. 10692696). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10692696

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…