The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
May. 27, 2014
Applicant:
Asml Netherlands B.v., Veldhoven, NL;
Inventors:
Teunis Van De Peut, Leusden, NL;
Marco Jan-Jaco Wieland, Delft, NL;
Assignee:
ASML NETHERLANDS B.V., Veldhoven, NL;
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/302 (2006.01); H01J 37/317 (2006.01); H01J 37/04 (2006.01); H01J 37/30 (2006.01); G06T 1/20 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G03F 7/20 (2006.01); G06T 1/60 (2006.01); H04N 1/405 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3026 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/70475 (2013.01); G06T 1/20 (2013.01); H01J 37/045 (2013.01); H01J 37/3002 (2013.01); H01J 37/3174 (2013.01); H01J 37/3175 (2013.01); H01J 37/3177 (2013.01); G06T 1/60 (2013.01); H01J 2237/3175 (2013.01); H01J 2237/31761 (2013.01); H01J 2237/31764 (2013.01); H04N 1/405 (2013.01);
Abstract
A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.