The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jan. 08, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Yi Wang, Tainan, TW;
Cheng-Pu Chiu, New Taipei, TW;
Huang-Ren Wei, Tainan, TW;
Tien-Shan Hsu, Tainan, TW;
Chi-Sheng Tseng, Tainan, TW;
Yao-Jhan Wang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/417 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); H01L 29/41791 (2013.01); H01L 29/4238 (2013.01); H01L 29/42376 (2013.01); H01L 29/4916 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01); H01L 21/32139 (2013.01); H01L 21/823431 (2013.01);
Abstract
A fin field effect transistor structure with particular gate appearance is provided in this disclosure, featuring a fin on a substrate and a gate on the substrate and traversing over the fin, wherein the fin is divided into an upper portion on a top surface of the fin and a lower portion on two sides of the fin, and the lower portion of the gate has protrusions laterally protruding in said first direction at positions abutting to the fin.