The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Nov. 19, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jheng-Sheng You, Hsinchu County, TW;
Hsin-Chih Lin, Hsinchu, TW;
Kun-Ming Huang, Taipei, TW;
Lieh-Chuan Chen, Hsinchu, TW;
Po-Tao Chu, New Taipei, TW;
Shen-Ping Wang, Keelung, TW;
Chien-Li Kuo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a source contact and a drain contact over the second III-V compound layer, a gate contact over the second III-V compound layer and between the source contact and the drain contact, a gate field plate over the second III-V compound layer, a first etch stop layer over the source contact, and a second etch stop layer over the drain contact and separated from the first etch stop layer.