The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jan. 16, 2018
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Muthumanickam Sankarapandian, Niskayuna, NY (US);
Ruilong Xie, Schenectady, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of fabricating a top source/drain junction of a vertical transistor includes forming a structure including a bottom source/drain, a fin channel extending vertically from the bottom source/drain, and a gate arranged around the fin channel, the gate including a dielectric layer, a gate metal, and spacers arranged on top and bottom surfaces of the gate; etching to form a recess in a top surface of the fin, the recess having sidewalls that form oblique angles with respect to sidewalls of the fin; forming a top source/drain on the fin and within the recess; doping the top source/drain with a dopant; and annealing to diffuse the dopants from the top source/drain into the fin.