The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Nov. 28, 2018
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A capacitor-coupled N-type transistor-based one-time programmable (OTP) device is disclosed. The OTP includes a transistor and a coupling capacitor both formed in a p-well and isolated from each other by field oxide or shallow trench isolation (STI). The transistor is constructed of a gate, a source region and a drain region composed of heavily-doped N-region. The coupling capacitor has a top plat formed of polysilicon on substrate surface, and a bottom plate constructed of an NLDD region and a heavily-doped N-region in the NLDD region. In order to achieve maximum capacitance utilization, the top plate of the coupling capacitor has a width not greater than the NLDD implantation region or twice a lateral junction depth of the heavily-doped n-region. The gate of the transistor may not be wider than the top plate of the coupling capacitor such that capacitance coupling ratio of the coupling capacitor to the transistor is optimized.