The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Jul. 25, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wan-Chun Kuan, Chiayi, TW;

Chih-Teng Liao, Hsinchu, TW;

Yi-Wei Chiu, Kaohsiung, TW;

Tzu-Chan Weng, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1083 (2013.01); H01L 29/161 (2013.01); H01L 29/24 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/0657 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.


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