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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10679857 B1

PDFFull Text
Date of Patent:
Jun. 09, 2020

Filed:

Jun. 14, 2019

Vertical transistor with trench gate insulator having varying thickness

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Johannes Georg Laven, Taufkirchen, DE;

Anton Mauder, Kolbermoor, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Werner Schustereder, Villach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Lex H Malsawma

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/78 (2006.01); H01L 37/00 (2006.01); H01L 29/04 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28158 (2013.01); H01L 21/28114 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 37/00 (2013.01); H01J 2237/30472 (2013.01); H01J 2237/3151 (2013.01); H01L 21/2652 (2013.01); H01L 29/045 (2013.01); H01L 29/7395 (2013.01);
Abstract

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

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