The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Oct. 12, 2018
Infineon Technologies Austria Ag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Hans Weber, Bayerisch Gmain, DE;
Franz Hirler, Isen, DE;
Johannes Georg Laven, Taufkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Maximilian Treiber, Munich, DE;
Daniel Tutuc, St. Niklas an der Drau, AT;
Andreas Voerckel, Finkenstein, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
Disclosed is a method that includes forming a plurality of semiconductor arrangements one above the other. In this method, forming each of the plurality of semiconductor arrangements includes: forming a semiconductor layer; forming a plurality of trenches in a first surface of the semiconductor layer; and implanting dopant atoms of at least one of a first type and a second type into at least one of a first sidewall and a second sidewall of each of the plurality of trenches of the semiconductor layer.