The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Nov. 15, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/22 (2006.01); H01J 37/16 (2006.01); H01J 37/20 (2006.01); H01J 37/06 (2006.01); H01J 37/10 (2006.01); H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
H01J 37/226 (2013.01); H01J 37/06 (2013.01); H01J 37/10 (2013.01); H01J 37/16 (2013.01); H01J 37/20 (2013.01); H01J 37/244 (2013.01); H01J 2237/2445 (2013.01); H01J 2237/24592 (2013.01);
Abstract
A method includes applying a voltage to a wafer or a device under test (DUT). The wafer or the DUT is illuminated with an electron beam after applying the voltage to the wafer or the DUT. Cathodoluminescent light emitted from the wafer or the DUT in response to the electron beam is detected. One or more characteristics of the wafer or the DUT are determined based on the detected cathodoluminescent light.